1.amabhodi wesekethe aphrintiwe we-high-density interconnect (i-hdi) (ama-pcbs) amelela inqubekelaphambili ebalulekile kubuchwepheshe bokupakisha be-elekthronikhi, okunika amandla ukuminyana kwezingxenye eziphezulu nokusebenza okuthuthukisiwe kukagesi uma kuqhathaniswa nama-pcbs avamile. Ubuchwepheshe be-hdi busebenzisa ama-microvias, i-blind vias, kanye nama-vias angcwatshwe anobubanzi obungaphansi kwama-microns angu-150, okuvumela ukunqwabelaniswa kwezingqimba eziningi nokubala kwesendlalelo esincishisiwe. lesi sakhiwo sinciphisa ubude bendlela yesignali, sithuthukisa ubuqotho besignali ngomzila olawulwayo we-impedance, futhi sisekela izinhlelo zokusebenza zefrikhwensi ephezulu kufika kububanzi begagasi obungamamilimitha obudlula ku-100 ghz. okuncishiswe ngobude be-stub kumadizayini we-hdi kuqhubekisela phambili nokunciphisa ukubonakaliswa kwesignali, okubalulekile ekuxhumaneni kwedijithali okunesivinini esikhulu njenge-pcie 5.0 kanye ne-ddr5.
2.izinqubo zokukhiqiza ezibalulekile zifaka phakathi ukubhoboza i-laser nge-uv noma i-co2 lasers yokwakheka kwe-microvia, ukufeza izilinganiso zesici ezifika ku-1:1, kanye nemijikelezo elandelanayo yokufakwa kwe-lamination enokucindezela okuphansi kokucindezela ukuvimbela ukulamba kwe-resin. amasu okucwenga athuthukile njengokugcwaliswa nge-electroplating yethusi aqinisekisa ukuthi akunalutho ngokugcwalisa, kuyilapho izinqubo ze-semi-additive (sap) zenza ububanzi bokulandelela bube buncane njengama-microns angu-25. izinto ezisetshenziswayo ngokuvamile zihlanganisa ama-dielectrics alahlekelwa kancane njenge-epoxy elungisiwe, i-polyphenylene ether (ppe), noma i-liquid crystal polymer (lcp), ene-dielectric constants (dk) ngaphansi kuka-3.5 ku-10 ghz nezici zokulahla (df) ngaphansi kuka-0.005. ukuphathwa kwe-thermal kulungiswa nge-vias egcwele ithusi ene-thermal conductivity efinyelela ku-400 w/mk, kanye nama-substrates ahambisa ukushisa ahlanganisa i-aluminium nitride noma i-boron nitride fillers, okuqinisekisa ukuthi izinga lokushisa le-junction lihlala lingaphansi kuka-125°c ezisetshenziswa zezimoto.
3.ama-hdi pcbs akhombisa izici ezihambisana nozibuthe kagesi eziphakeme (emc) ngenxa yezikimu ezisekelwe phansi ezithuthukisiwe, njengokucushwa kwe-via-in-pad kanye nezendlalelo ze-capacitance eshumekiwe, ehlisa imisebe yokuphazamiseka kagesi (emi) ngo-15-20 db uma kuqhathaniswa nemiklamo esekwe ku-fr4. Ukucatshangelwa kwedizayini kugunyaza ukulawula okuqinile kokuvimba, ngokuvamile okungu-50 ohms ±5% kumapheya ahlukile kuma-interface angu-25-56 gbps, kanye nemithetho enembile yokulandelela ububanzi/isikhala engaphansi kwama-microns angu-50/50 wamasekhethi e-rf. Ukucindezelwa kwenkulumo-mpikiswano kufinyelelwa ngamagagasi egagasi e-coplanar agxilile futhi anyakaziswa ngamalungiselelo, kuncishiswe ukuhlangana kube ngaphansi kuka -40 db.
4.Ukuhlola okuzenzakalelayo kwe-optical inspection (i-aoi) ene-5-micron resolution, i-x-ray tomography yokuhlaziywa kwe-3d void, kanye ne-time-domain reflectometry (tdr) enezikhathi zokukhuphuka kwe-10-ps yizinyathelo ezibalulekile zokuqinisekisa ikhwalithi. lawa masu athola ukukhubazeka kwe-microvia njengokungaphelele kwe-plating noma ukubhaliswa kabi ngaphansi kwama-microns angama-20. izinhlelo zokusebenza zifinyelela ku-5g ama-antenna amakhulu e-mimo adinga izitaki ze-hdi zezendlalelo ezingu-20, izisetshenziswa zezokwelapha ezifakelwayo ezine-biocompatible soldermask, amamojula e-lidar ezimoto ano-0.2-mm pitch bgas, kanye nokulayisha kwesathelayithi okuhlangana nezindinganiso zokwethembeka ze-mil-prf-31032 isigaba 3.
5.ukuthuthukiswa kwesikhathi esizayo kugxile ezingxenyeni zephimbo ezinhle kakhulu ezingaphansi kuka-0.3 mm, ezidinga ukwakheka kwe-laser eqondile (dls) ngezincazelo zemigqa engu-15-micron, kanye nokuhlanganiswa kokukhiqiza okungeziwe kokushumeka okuhlukahlukene kwe-si photonics noma i-gan dies. ukuthobela imvelo kuqhuba ucwaningo ezintweni ezingenazo i-halogen ezinamazinga okushisa engilazi (tg) angaphezu kuka-180°c, futhi indawo engenamthofu iphelela njenge-electroless nickel electroless palladium immersion gold (enepig), ethobela iziqondiso ze-rohs 3. ukuhlanganiswa kwemboni engu-4.0 kunika amandla ukuqapha kwenqubo yesikhathi sangempela ngamabhavu okucwenga anikwe amandla e-iot, kuyilapho ama-algorithms okufunda komshini aqeqeshelwa izithombe ze-microvia ezingu-10,000+ afinyelela ukunemba kokubikezela kokukhubazeka okungu-99.3%. ubuchwepheshe be-hdi buyaqhubeka nokunika amandla ukuncishiswa kosayizi wama-30-50% kuma-elekthronikhi aphathwayo kuyilapho kugcinwa isivuno sokukhiqiza ngaphezu kuka-98.5% ngokusebenzisa ukulawulwa kwamandla we-laser okuguquguqukayo kanye namafilimu okukhululwa ane-nano-coated anciphisa i-drill smear.